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HAF2015RJ
Silicon N Channel MOS FET Series Power Switching
ADE-208-933 (Z) 1st. Edition Dec. 2000
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
* * * * * Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Temperature hysteresis type. High density mounting.
Outline
SOP-8
D 7 D 8
2 G
Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit
1 S D 5
5 76
3 12
4
MOS1
D 6
4 G
Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circuit
3 S
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
MOS2
HAF2015RJ
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Symbol VDSS VGSS VGSS ID I D(pulse) I DR I AP
Note4 Note4 Note2 Note3 Note1
Ratings 60 16 -2.5 2 4 2 0.54 25 2 1.5 150 -55 to +150
Unit V V V A A A A mJ W W C C
EAR
Pch Pch Tch
Tstg
PW 10 s, duty cycle 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6mm), PW 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6mm), PW 10s Tch = 25C , Rg > 50
Typical Operation Characteristics
Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Hysteresis temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd Thr Vop Min 3.5 -- -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.53 0.2 175 120 -- Max -- 1.2 100 50 1 -- -- -- -- 12 Unit V V A A A mA mA C C V Vi = 5V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Channel temperature Test Conditions
2
HAF2015RJ
Electrical Characteristics (Ta = 25C)
Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS V(BR)GSS I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(op)1 I GS(op)2 Zero gate voltege drain current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation timeNote6 Note: I DSS1 I DSS2 VGS(off) RDS(on) RDS(on) |yfs| Coss t d(on) tr t d(off) tf VDF t rr t os1 Min 0.7 -- 60 16 -2.5 -- -- -- -- -- -- -- -- 1.4 -- -- 0.5 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 0.53 0.2 -- -- -- 130 110 2.5 139 4.2 20 1 1 0.82 55 15 Max -- 10 -- -- -- 100 50 1 -100 -- -- 10 10 2. 5 200 160 -- -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A mA V m m S pF s s s s V ns ms I F = 2A, VGS = 0 I F = 2A, VGS = 0 diF/ dt = 50 A/s VGS = 5 V, VDD = 16 V Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V I D = 10 mA, VGS = 0 I G = 300 A, VDS = 0 I G = -100 A, VDS = 0 VGS = 5 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125C I D = 1 mA, VDS = 10V I D = 1 A, VGS = 5 V Note5 I D = 1 A, VGS = 10 V Note5 I D = 1 A, VDS = 10 V Note5 VDS = 10V , VGS = 0 f = 1 MHz I D = 1 A, VGS = 5 V RL = 30
5. Pulse test 6. Including the junction temperature rise of the over loaded condition
3
HAF2015RJ
Main Characteristics
Power vs. Temperature Derating 4.0 Pch (W) Test Congition: When using the glass epoxy board (FR4 40 x 40 x 1.6mm), PW < 10 s 50 20 Drain Current I D (A) 10 5
1 m
Maximum Safe Operation Area Thermal shut down Operation area
10
0
3.0
s
Channel Dissipation
2 1 0.5 0.2
Operation in this area is limited by R DS(on)
2.0
PW
s
2D 1D riv eO
=
riv eO
10
m
s
pe
1.0
rat i
pe
on
rat i
on
0
50
100
150 Tc (C)
200
Case Temperature
PW Op 0.1 Ta = 25C < era 10 tio 1 shot Pulse n s 0.05 1 Drive Operation 0.03 0.5 1 2 5 10 20 50 100 Drain to Source Voltage VDS (V)
DC
Note7: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
5
Typical Output Characteristics 10 V 8V 6V 5V Pulse Test
Typical Transfer Characteristics 2.5 V DS = 10 V Pulse Test 2 Drain Current I D (A) Tc = -25C 25C 75C
No
te
7
4 Drain Current I D (A)
3
1.5
4V 2 VGS = 3.5 V 1
1
0.5
0
2 4 6 8 Drain to Source Voltage VDS (V)
10
0
1 2 3 4 5 Gate to Source Voltage VGS (V)
4
HAF2015RJ
Drain to Source On State Resistance R DS(on) (m) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) 0.25 Pulse Test Static Drain to Source Sate Resistance vs. Drain Current 500
0.2
200 V GS = 5 V 100 50 V GS = 10 V
0.15 I D= 1 A 0.1 0.5 A 0.2 A 0 2 4 6 8 VGS (V) 10
0.05
20 Pulse Test 10 0.1 0.2 0.5 1 2 5 Drain Current I D (A)
10
20
Gate to Source Voltage
R DS(on) (m)
Drain to Source On State Resistance
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.5 A, 0.2 A ID=1A 0.2 V GS = 5 V 0.15 ID=1A 0.5 A, 0.2 A 0.1 V GS = 10 V 0.05 0 -40
10 5 2 1
Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test Tc = -25C
0.5 25C
75C
0.2 0.1 0.05 0.1
0 40 80 120 Case Temperature Tc (C)
160
0.2 0.5 1 2 Drain Current I D (A)
5
5
HAF2015RJ
Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 100
Switching Characteristics
V GS = 5 V, V DD *=* 30 V 50 PW = 300 s, duty 1 % 20 10 5 2 1 tf t d (off)
0.5 1 2 5
Switching Time t (s)
200 100 50
tr t d (on)
20 10
di / dt = 50 A / s V GS = 0, Ta = 25C
0.5 1 2 5
0.5
0.01 0.02 0.05 0.1 0.2
0.01 0.02 0.05 0.1 0.2
Reverse Drain Current
I DR
(A)
Drain Current
I D (A)
Reverse Drain Current vs. Souece to Drain Voltage 5 Reverse Drain Current I DR (A) VGS = 5 V 4 1000 Pulse Test Capacitance Coss (pF)
Typical Capacitance vs. Drain to Source Voltage
3 0V 2
100
1 10 0.4 0.8 1.2 1.6 V SD(V) 2.0 0 Source to Drain Voltage VGS = 0 f = 1 MHz 10 20 30 40 50 Drain to Source Voltage VDS (V)
0
6
HAF2015RJ
Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 8 6 4 2 0 0.0001 Shutdown Case Temperature Tc (C)
GS
Shutdown Case Temperature vs. Gate to Source Voltage 200
(V)
Gate to Source Voltage
V
V DD= 16 V
180
160
140
120 100 0
I D = 0.2 A
0.001
0.01
0.1
1
2
4
6
8 V GS (V)
10
Shutdown Time of Load-Short Test Pw (S)
Gate to Source Voltage
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 5V 50W V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
7
HAF2015RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
p ot uls e
ch-f(t) = s (t) * ch - f ch-f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
PDM PW T
0.001
1s
h
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
lse
ch-f(t) = s (t) * ch - f ch-f = 166 C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
pu
PDM PW T
0.001
1s
t ho
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
8
HAF2015RJ
Package Dimensions As of January, 2001
Unit: mm
4.90 5.3 Max 5 8 3.95 1 4 *0.22 0.03 0.20 0.03 1.75 Max
0.75 Max
6.10 - 0.30
+ 0.10
1.08 0 - 8
+ 0.67
0.14 - 0.04
+ 0.11
1.27 *0.42 0.08 0.40 0.06
0.60 - 0.20
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms -- 0.085 g
9
HAF2015RJ
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10

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